| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compact random number generator generating a high quality random number. <P>SOLUTION: A percolation channel 122 in which an electron showing electrical characteristics derived from a single electronic effect by the surface undulations of a very thin film SOI (Silicon On Insulator) transistor 12 flows is provided. An electron capture site 124 captures the electron made to flow through the percolation channel 122 or discharges the captured electron to the percolation channel 122. A potential wall H isolating the percolation channel 122 from the electron capture site 123 is formed. The very thin film SOI transistor 12 generates the disturbance of the electron between the percolation channel 122 and the electron capture site 124 by room temperature-heat energy. A random number information reading circuit 16 reads output from the very thin film SOI transistor 12 caused by the disturbance of the electron to generate random number information. <P>COPYRIGHT: (C)2004,JPO |
