| 摘要 |
1,179,420. Tunnel diodes. N. PUYCHEVRIER, and M. MENORET. 3 Oct., 1967 [3 Oct., 1966], No. 44899/67. Heading H1K. A tunnel diode comprising a heavily-doped N-type GaAs plate I having fused thereto a Zncovered Cu wire 2 is manufactured by placing the Zn-covered wire 2 in contact with the doped GaAs plate and then applying a reverse-biasing voltage pulse between the plate 1 and wire 2 of such amplitude and duration that the pulse ceases when the current flowing reaches a predetermined value whereby the wire 2 is fused to the plate 1 and a P-type impurity in the form of zinc is diffused into the plate I to form a junction therein. The plate 1 containing 10<SP>19</SP> atoms. cm.<SP>-3</SP> of selenium is initially soldered by a Sn-Pb solder to copper wire 11 while galvanized copper wire 12 is soldered to the wire 12. Wires 11 and 12 are supported within a glass bead 10. After formation the tunnel diode is varnished and encased. |
