METHOD FOR DOPING OXYGEN TO GaN CRYSTAL AND OXYGEN-DOPED GaN SINGLE CRYSTAL SUBSTRATE,申请号KR20020019885-传众专利搜索

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发明名称	METHOD FOR DOPING OXYGEN TO GaN CRYSTAL AND OXYGEN-DOPED GaN SINGLE CRYSTAL SUBSTRATE
摘要
申请公布号	KR100484482(B1)	申请公布日期	2005.04.20
申请号	KR20020019885	申请日期	2002.04.12
申请人		发明人
分类号	H01L33/00;C30B23/00;C30B23/02;C30B25/00;C30B25/02;C30B29/38;C30B29/40;C30B33/00;H01L21/205;(IPC1-7):H01L33/00	主分类号	H01L33/00
代理机构		代理人
主权项
地址

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