| 摘要 |
Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a first semiconductor material on the substrate and having a second in-plane unstrained lattice constant that is different from the first in-plane unstrained lattice constant and a variable mismatch layer comprising a second semiconductor material disposed between the substrate and the first layer. The variable mismatch layer is configured to reduce stress in the first layer to below a level of stress resulting from growth of the first layer directly on the substrate. The variable mismatch layer may be a layer having a strained in-plane lattice constant that substantially matches the unstrained lattice constant of the first layer. |
