| 摘要 |
FIELD: vacuum and solid state electronics. ^ SUBSTANCE: proposed method involves use of semiconductor substrate having plurality of micropoints disposed according to vacuum integrated circuit layout. Conductor and insulator plasma streams are alternately conveyed to substrate. Conductor plasma stream is produced by exciting series of pulsed vacuum arcs of length tau and space T between plasma generator cathode and anode. Insulator plasma stream is produced by injecting reactive gas. Atoms and ions whose energy in transport is over eU2 are removed from conductor and insulator plasma streams. Potential barrier of eU2 < eU1 is formed above end of each of plurality of micropoints for insulator plasma ions and for conductor plasma ions whose energy is lower than eU2 in the form of plurality of closed equipotential surfaces of potential U2. Insulator plasma and conductor plasma are condensed on external end of equipotential surfaces and plurality of closed spaces whose shape is dictated by shape of closed equipotential surfaces are used as bulbs of electronic valves. ^ EFFECT: facilitated manufacture of vacuum integrated circuits due to dispensing with etching and lithographic operations; improved quality of products. ^ 21 cl, 13 dwg |
