| 摘要 |
The invention relates to a semiconductor laser device comprising: a semiconductor laser element (1) with at least one emission surface (5), from which laser light can emanate, said light having a greater divergence in a first direction (Y) than in a second direction that is perpendicular to the first; an external resonator with at least one reflective element (3, 9) comprising a reflective surface (4, 10), which can reflect at least part of the light that emanates from the semiconductor laser element (1) through the emission surface (5) back into the semiconductor laser element (1), in such a way that the mode spectrum of said semiconductor element (1) is influenced as a result; and a lens element (2), which is located inside the external resonator between the reflective element (3, 9) and the semiconductor laser element (1) and can at least partially reduce the divergence of the laser light, at least in the first direction (Y). The reflective surface (4, 10) of the reflection element (3, 9) is concave. |
