发明名称 |
METHOD FOR STORING AND/OR READING INFORMATION IN/OUT OF A FERROELECTRIC MATERIAL |
摘要 |
To store information in a ferroelectric material, a sample probe is used to bring about mechanical action on individual domains and thereby to cause a reversal of polarization in the individual domains, with electrodes situated below the ferroelectric material being able to have a bias applied to them to stabilize the change/reversal of polarization. The reversal of polarization causes an alteration in the surface topography of the ferroelectric material, and this alteration can be used to read the information. The stored information is therefore obtained by ascertaining the surface topography of the ferroelectric material. The information is written and read using an AFM tip, with the tip being able to be operated in contact or tapping mode for the purpose of writing, and additionally in noncontact mode for the purpose of reading. |
申请公布号 |
EP1523744(A1) |
申请公布日期 |
2005.04.20 |
申请号 |
EP20030763859 |
申请日期 |
2003.07.15 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHINDLER, GUENTHER;VOGEL, MARKUS;ZYBILL, CHRISTIAN ERICH |
分类号 |
G11B9/00;G11B9/02;G11B11/00;G11B11/16;G11C11/22;(IPC1-7):G11B9/02 |
主分类号 |
G11B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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