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发明名称
METHOD FOR MANUFACTURING DUAL GATE OXIDE TRANSISTOR
摘要
申请公布号
KR20050036005(A)
申请公布日期
2005.04.20
申请号
KR20030071304
申请日期
2003.10.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHO, MIN HEE;KIM, JI YOUNG
分类号
H01L21/336;H01L21/76;H01L21/762;H01L21/8234;(IPC1-7):H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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