Nitride semiconductor light emitting device chip

摘要

In a nitride semiconductor light emitting device chip, a mask pattern on a nitride semiconductor substrate ( 101 ) is formed of a growth inhibiting film on which a nitride semiconductor layer is hard to grow. There are a plurality of windows unprovided with the growth inhibiting film. There are at least two different widths as mask widths each between the adjacent windows. The mask pattern includes a mask A group (MAG) and mask B groups (MBG) arranged on respective sides of the mask A group. A mask A width in the mask A group is wider than a mask B width in the mask B group. The nitride semiconductor light emitting device chip further includes a nitride semiconductor underlayer ( 102 ) covering the windows and the mask pattern, and a light emitting device structure having a light emitting layer ( 106 ) including at least one quantum well layer between an n type layer ( 103-105 ) and a p type layer ( 107-110 ) over the underlayer. A current-constricting portion (RS) through which substantial current is introduced into the light emitting layer is formed above mask A.