发明名称 |
Metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer |
摘要 |
A metal-insulator-metal (MIM) capacitor structure and method of fabrication for CMOS circuits having copper interconnections are described. The method provides metal capacitors with high figure of merit Q (X<SUB>c</SUB>/R) and which does not require additional masks and metal layers. The method forms a copper capacitor bottom metal (CBM) electrode while concurrently forming the pad contacts and level of copper interconnections by the damascene process. An insulating (Si<SUB>3</SUB>N<SUB>4</SUB>) metal protect layer is formed on the copper and a capacitor interelectrode dielectric layer is formed. A metal protecting buffer is used to protect the thin interelectrode layer, and openings are etched to pad contacts and interconnecting lines. A TiN/AlCu/TiN metal layer is deposited and patterned to form the capacitor top metal (CTM) electrodes, the next level of interconnections, and to provide a pad protect layer on the copper pad contacts. The thick TiN/AlCu/TiN CTM electrode reduces the capacitor series resistance and improves the capacitor figure of merit Q, while the pad protect layer protects the copper from corrosion.
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申请公布号 |
US6881996(B2) |
申请公布日期 |
2005.04.19 |
申请号 |
US20040935376 |
申请日期 |
2004.09.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHEN CHUN-HON;MA SSU-PIN;YEH TA-HSUN;HO YEN-SHIH;PENG KUO-REAY;HSU HENG-MING;THEI KONG-BENG;CHOU CHI-WU |
分类号 |
H01L21/02;H01L21/8238;H01L21/8242;H01L23/522;H01L27/08;H01L27/108;H01L29/76;H01L31/119;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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