发明名称 |
Method and device for minimizing multi-layer microscopic and macroscopic alignment errors |
摘要 |
A method of aligning a second layer to a first layer of a semiconductor structure by forming a first layer of a wafer having a distinguished feature via a first etching process that employs a first ionized gas generating machine. Forming a second layer having a circuit pattern via a second etching process that employs a second ionized gas generating machine, wherein the forming the second layer includes minimizing relative shifting between the distinguished feature located at an edge of the wafer for the first layer and the second circuit pattern located at the edge of the wafer for the second layer.
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申请公布号 |
US6881592(B2) |
申请公布日期 |
2005.04.19 |
申请号 |
US20030453858 |
申请日期 |
2003.06.03 |
申请人 |
INFINEON TECHNOLOGIES RICHMOND, LP |
发明人 |
ROBERTS WILLIAM;TRAN DIEM-THY NGU-UYEN;JOWETT PAUL;CLEMENTS NICHOLAS;JEKAUC IGOR;DAVIDSON KAREN ANNE;SABISCH WINIFRIED |
分类号 |
H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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