发明名称 |
Magnetic memory device having magnetic circuit and method of manufacture thereof |
摘要 |
A magnetic memory device includes first and second magnetoresistance elements. The first and second magnetoresistance elements store information and are provided apart from each other in a first direction. A first wiring to apply a magnetic field to the first and second magnetoresistance elements is provided along the first direction. A first magnetic circuit is formed along a side of the first wiring and has a notch in its portion between the first and second magnetoresistance elements.
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申请公布号 |
US6882564(B2) |
申请公布日期 |
2005.04.19 |
申请号 |
US20030359151 |
申请日期 |
2003.02.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUZUMI YOSHIAKI |
分类号 |
H01L27/105;G11C11/15;H01L21/8246;H01L27/10;H01L43/08;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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