发明名称 |
Semiconductor device with analog capacitor and method of fabricating the same |
摘要 |
A semiconductor device having an analog capacitor and a method of fabricating the same are disclosed. The semiconductor device includes a bottom plate electrode disposed at a predetermined region of a semiconductor substrate, and an upper plate electrode having a region overlapped with the bottom plate electrode thereon. The upper plate electrode and the bottom plate electrode are formed of a metal compound. A capacitor dielectric layer is interposed between the bottom plate electrode and the upper plate electrode. A bottom electrode plug and an upper electrode plug are connected to the bottom plate electrode and the upper plate electrode through the interlayer dielectric layer.
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申请公布号 |
US6881999(B2) |
申请公布日期 |
2005.04.19 |
申请号 |
US20030393093 |
申请日期 |
2003.03.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KI-YOUNG;PARK SANG-HOON |
分类号 |
H01L21/02;H01L21/768;H01L27/08;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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