| 发明名称 |
Strained silicon NMOS devices with embedded source/drain |
| 摘要 |
A planar NFET on a strained silicon layer supported by a SiGe layer achieves reduced external resistance by removing SiGe material outside the transistor body and below the strained silicon layer and replacing the removed material with epitaxial silicon, thereby providing lower resistance for the transistor electrodes and permitting better control over Arsenic diffusion.
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| 申请公布号 |
US6881635(B1) |
申请公布日期 |
2005.04.19 |
| 申请号 |
US20040708746 |
申请日期 |
2004.03.23 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;LEOBANDUNG EFFENDI;MOCUTA ANDA C.;YANG HAINING S.;ZHU HUILONG |
| 分类号 |
C30B25/18;C30B29/06;H01L21/20;H01L21/285;H01L21/336;H01L29/10;H01L29/78;H01L29/786;(IPC1-7):H01L21/336;H01L21/36;C30B23/00 |
主分类号 |
C30B25/18 |
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