发明名称 |
Stacked 1T-nMTJ MRAM structure |
摘要 |
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read multiple MRAM cells, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a "Z" axis direction.
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申请公布号 |
US6882566(B2) |
申请公布日期 |
2005.04.19 |
申请号 |
US20040895975 |
申请日期 |
2004.07.22 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
NEJAD HASAN;SEYYEDY MIRMAJID |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/22;(IPC1-7):G11C11/14 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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