| 摘要 |
A method for manufacturing a semiconductor device includes forming a plurality of gate electrodes on a semiconductor substrate, forming an etching prevention film over the surface of the adjacent gate electrodes and on the semiconductor substrate between the adjacent gate electrodes, and forming an organic insulation film having heat-resistance on the etching prevention film. The method further includes removing the organic insulation film above the gate electrodes in such a manner that the organic insulation film remains between the gate electrodes, forming an interlayer insulation film on a laminate section obtained by the organic insulation film removing step, forming a contact hole by removing the interlayer insulation film on the remaining organic insulation film with a width wider than the distance between the gate electrodes, and exposing the semiconductor substrate between the gate electrodes by removing the organic insulation film and the etching prevention film remaining inside the contact hole.
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