| 发明名称 |
High density modular structure for power management sub circuits in silicon integrated complementary metal-oxide-semiconductor, has transistor-based capacitors connected with drain and source terminals of MOSFET |
| 摘要 |
<p>The structure has transistor-based capacitors connected with drain and source terminals of MOSFET.</p> |
| 申请公布号 |
ES2229947(A1) |
申请公布日期 |
2005.04.16 |
| 申请号 |
ES20030002465 |
申请日期 |
2003.10.14 |
| 申请人 |
UNIVERSITAT POLITECNICA DE CATALUNYA |
发明人 |
VILLAR PIQUE GERARD;ALARCON COT EDUARD;GUINJOAN GISPERT FRANCESC;POVEDA LOPEZ ALBERTO |
| 分类号 |
H01L29/94;(IPC1-7):H01L29/94 |
主分类号 |
H01L29/94 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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