发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH MOS TRANSISTORS HAVING FLOATING GATE AND CONTROL GATE |
摘要 |
<p>A semiconductor memory device includes a first MOS transistor, a second MOS transistor, and a sidewall insulating film. The first MOS transistor has a stacked gate and a silicide layer formed in a source and on the stacked gate. The second MOS transistor has a stacked gate and a silicide layer formed in a region and on the stacked gate. A drain of the first MOS transistor is connected to a source of the second MOS transistor. The sidewall insulating film is formed on the sidewall of the stacked gate of the first MOS transistor. The film thickness of the sidewall insulating film is greater than ½ of the distance between the stacked gates of the first and second MOS transistors. No silicide layer is formed in the drain of the first MOS transistor and in the source of the second MOS transistor.</p> |
申请公布号 |
KR20050035096(A) |
申请公布日期 |
2005.04.15 |
申请号 |
KR20040080382 |
申请日期 |
2004.10.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ARAI, FUMITAKA;MATSUNAGA, YASUHIKO;SAKUMA, MAKOTO |
分类号 |
H01L21/8247;G11C11/34;G11C16/04;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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