A semiconductor gas sensor by ?-Fe2O3 sensing layer and a method of thereof,申请号KR20010051912-传众专利搜索

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发明名称	A semiconductor gas sensor by ?-Fe2O3 sensing layer and a method of thereof
摘要
申请公布号	KR100483180(B1)	申请公布日期	2005.04.15
申请号	KR20010051912	申请日期	2001.08.24
申请人		发明人
分类号	G01N27/40;(IPC1-7):G01N27/40	主分类号	G01N27/40
代理机构		代理人
主权项
地址

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