发明名称 Interconnect structures with engineered dielectrics with nanocolumnar porosity
摘要 A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described.
申请公布号 US2005079719(A1) 申请公布日期 2005.04.14
申请号 US20030683333 申请日期 2003.10.10
申请人 COLBURN MATTHEW E.;NITTA SATYA V.;PURUSHOTHAMAN SAMPATH;BLACK CHARLES;GUARINI KATHRYN 发明人 COLBURN MATTHEW E.;NITTA SATYA V.;PURUSHOTHAMAN SAMPATH;BLACK CHARLES;GUARINI KATHRYN
分类号 H01L21/311;H01L21/60;H01L21/768;H01L23/52;H05K3/10;H05K3/46;(IPC1-7):H01L21/311 主分类号 H01L21/311
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