发明名称 |
Interconnect structures with engineered dielectrics with nanocolumnar porosity |
摘要 |
A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described.
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申请公布号 |
US2005079719(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20030683333 |
申请日期 |
2003.10.10 |
申请人 |
COLBURN MATTHEW E.;NITTA SATYA V.;PURUSHOTHAMAN SAMPATH;BLACK CHARLES;GUARINI KATHRYN |
发明人 |
COLBURN MATTHEW E.;NITTA SATYA V.;PURUSHOTHAMAN SAMPATH;BLACK CHARLES;GUARINI KATHRYN |
分类号 |
H01L21/311;H01L21/60;H01L21/768;H01L23/52;H05K3/10;H05K3/46;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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