METHOD FOR DEPOSITING A CONDUCTIVE MATERIAL ON A SUBSTRATE, AND SEMICONDUCTOR CONTACT DEVICE

摘要

The invention relates to a method for depositing a carbon material (17) in or on a substrate (14). Said method comprises the following steps: the inside (10') of a processing chamber (10) is heated to a pre-determined temperature; the substrate (14) is introduced into the processing chamber (10); the air in the processing chamber (10) is evacuated until a pre-determined pressure or a lower pressure is reached; a gas (12) containing at least carbon is introduced until a second pre-determined pressure is reached, that is higher than the first pre-determined pressure; and the carbon material (17) is deposited on a surface or in a recess (15), from the gas (12) containing carbon. The invention also relates to a semiconductor contact device.