| 摘要 |
1,160,381. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 1 Nov., 1966 [6 Dec., 1965], No. 48847/66. Heading H1K. A semi-conductor device is made by depositing on a semi-conductor substrate a metal film so thin that it is in the form of isolated islands and making electrical contact to only some of these islands. Schottky diodes of this type are made by cleaning the surface of a tellurium or tin-doped N-type gallium arsenide body by heating in vacuum and then evaporating gold on the body while it is held at 300‹ C. to form a layer consisting of islands 400-500Š thick 0À1-1 Á in diameter. The resulting structure is mounted on a metal stud threaded into a plastics cup. A probe of 0À1-0À3 mil tip diameter is pressed into contact with one or more of the islands and moved around to find a contact with the required electrical characteristics. The probe is mounted on a threaded adjustment stud or is carried by a resilient diaphragm which the stud bears on. If separate contact is made to two of the contacts about a mil apart a point contact transistor can be formed. Connection to the contacts may alternatively be made by evaporated gold layers extending through holes in an oxide film. Transistors of the junction or field effect type may be made by depositing isolated goldgallium alloy contacts over the control area of a diffused N-type surface (base) layer on a P-type germanium (collector) substrate and depositing gold-antimony to form strip electrodes or areas of isolated contacts on either side of the central area. These serve as base contacts in the junction transistor or as source and drain in the field effect device, the goldgallium contacts functioning as emitters and gates respectively. |
