| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an aqueous polishing composition which controls a removing speed when a silicon oxide-containing layer of a semiconductor device is removed, and a polishing method using it. <P>SOLUTION: The aqueous polishing composition includes a corrosion inhibitor for limiting the removal of an interconnect metal with an acidic pH. The composition includes organic-containing ammonium salt formed using a formula wherein R<SB>1</SB>, R<SB>2</SB>, R<SB>3</SB>and R<SB>4</SB>are radicals, and R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from a group consisting of SiC, SiCN, Si<SB>3</SB>N<SB>4</SB>and SiCO. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
