| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a photovoltaic element wherein incident light is utilized maximally, and manufacturing cost and manufacturing time are reduced. <P>SOLUTION: An i-type amorphous silicon film 4 is formed on a back of an n-type single crystal silicon substrate 1. A metal mask is put on a part of the i-type amorphous silicon film 4, and a p-type amorphous silicon film 5 is formed on a part except the metal mask on the i-type amorphous silicon film 4. An n-type amorphous silicon film 6 is formed on the p-type amorphous silicon film 5 and the i-type amorphous silicon film 4. A metal mask is put so as to cover the upper part of the n-type amorphous silicon film 6 except a region where the p-type amorphous silicon film 5 exists, and a back electrode 8 and a collector electrode 10 are formed by a sputtering method on parts except the metal mask. A metal mask is put on the collector electrode 10, and a back electrode 7 and a collector electrode 9 are formed by a sputtering method in parts on the n-type amorphous silicon film 6 except the metal mask. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
