SEMICONDUCTOR LAYER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide semiconductor laser elements capable of emitting laser light of low ellipticity even in an operation environment of high temperature and to provide a method for manufacturing these semiconductor laser elements. SOLUTION: In manufacturing a semiconductor laser constituted of forming a lower clad layer 103, an active layer 105 including quantum well layer and an upper clad layer 106 on the upper part of a semiconductor substrate 100 in order and having a window area C including a layer on which the quantum well layer of the active layer 105 is adjacent to the active layer 105 and a mixed crystal part, the refractive index of the lower clad layer 103 is larger than that of the upper clad layer and the extent of light intensity distribution 140C in the window area C in the direction perpendicular to the surface of the semiconductor substrate 100 is wider than the extent of the light intensity distribution in a gain area A. COPYRIGHT: (C)2005,JPO&NCIPI