| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device to which an interlayer insulating layer can be embedded sufficiently among wiring layers by forming the wiring layer of excellent shape. SOLUTION: The method for manufacturing semiconductor device comprises the steps of forming an interlayer insulating layer 20 on the upper side of a semiconductor layer 10, forming a conductive layer 34a on the upper part of the interlayer insulating layer 20, forming a cap layer 36a on the upper part of the conductive layer 34a, forming a first mask layer M1 on the upper part of the cap layer 36a, etching the cap layer 36a using the first mask layer M1 as the mask, forming a second mask layer M2 formed of a side wall layer on the side surface of the first mask layer M1, etching the conductive layer 34a using the first mask layer M1 and second mask layer M2, and removing the second mask layer M2. COPYRIGHT: (C)2005,JPO&NCIPI
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