发明名称 |
Method of making a semiconductor transistor |
摘要 |
Transistors are manufactured by growing germanium source and drain regions, implanting dopant impurities into the germanium, and subsequently annealing the source and drain regions so that the dopant impurities diffuse through the germanium. The process is simpler than a process wherein germanium is insitu doped with p-type or n-type impurities. The dopant impurities diffuse easily through the germanium but not easily through underlying silicon, so that an interface between the germanium and silicon acts as a diffusion barrier and ensures positioning of the dopant atoms in the regions of the device where they improve transistor performance.
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申请公布号 |
US2005079660(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20040917165 |
申请日期 |
2004.08.11 |
申请人 |
MURTHY ANAND S.;BOYANOV BOYAN;SOMAN RAVINDRA;CHAU ROBERT S. |
发明人 |
MURTHY ANAND S.;BOYANOV BOYAN;SOMAN RAVINDRA;CHAU ROBERT S. |
分类号 |
H01L21/225;H01L21/336;H01L21/8238;H01L29/165;H01L29/45;H01L29/78;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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