发明名称 |
Metal-oxide-semiconductor device with enhanced source electrode |
摘要 |
An MOS device is formed including a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. A gate is formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. The MOS device further includes at least one contact, the at least one contact including a silicide layer formed on and in electrical connection with at least a portion of the first source/drain region, the silicide layer extending laterally away from the gate. The contact further includes at least one insulating layer formed directly on the silicide layer.
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申请公布号 |
US2005077552(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20030673539 |
申请日期 |
2003.09.29 |
申请人 |
BAIOCCHI FRANK A.;JONES BAILEY R.;SHIBIB MUHAMMED AYMAN;XU SHUMING |
发明人 |
BAIOCCHI FRANK A.;JONES BAILEY R.;SHIBIB MUHAMMED AYMAN;XU SHUMING |
分类号 |
H01L21/336;H01L21/8234;H01L29/08;H01L29/417;H01L29/45;H01L29/76;H01L29/78;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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