| 发明名称 |
Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung |
| 摘要 |
A gallium nitride-based III-V Group compound semiconductor device (10) has a gallium nitride-based III-V Group compound semiconductor layer (13) provided over a substrate (11), and an ohmic electrode (15) provided in contact with the semiconductor layer (13). The ohmic electrode (15) is formed of a metallic material, and has been annealed. <IMAGE> |
| 申请公布号 |
DE69425186(T3) |
申请公布日期 |
2005.04.14 |
| 申请号 |
DE1994625186T |
申请日期 |
1994.04.27 |
| 申请人 |
NICHIA CORP., ANAN |
发明人 |
NAKAMURA, SHUJI;YAMADA, TAKAO;SENOH, MASAYUKI;BANDO, KANJI;YAMADA, MOTOKAZU |
| 分类号 |
H01L21/00;H01L21/285;H01L29/20;H01L29/72;H01L33/00;H01L33/32;H01L33/38;H01L33/40;H01L33/42;H01L33/44;H01S5/00;H01S5/042;H01S5/323 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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