TESTING APPARATUS AND METHOD FOR DETERMINING AN ETCH BIAS ASSOCIATED WITH A SEMICONDUCTOR-PROCESSING STEP

摘要

A testing apparatus for determining the etch bias associated with a semiconductor-processing step includes a substrate, a first cathode finger with a first width on the substrate, a second cathode finger with a second width on the substrate, and a cathode large area on the substrate wherein the cathode large area has a third width W'' and a length L'' that are both substantially larger than either of the first and second widths.