| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric thin film having good hysteresis characteristics applicable to a ferroelectric capacitor, 1T1C, 2T2C type ferroelectric memory consisting of a select CMOS transistor, and simple matrix type ferroelectric memory, and the like. <P>SOLUTION: In a ferroelectric Pb(Zr, Ti)O<SB>3</SB>where the A site ion of a ferroelectric perovskite material contains at least 4 coordination Si<SP>4+</SP>or Ge<SP>4+</SP>by 1% or more, reliability is enhanced significantly by adding at least one kind of Nb, V and W to B site by total 5-40 mol%. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
