| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable reduction of consumption power and stabilization of write-in property by installing magnetic tunnel junction elements different in coercive force, and by supplying a current corresponding to the coercive force of each of the elements. <P>SOLUTION: The magnetic storage device is provided with a plurality of memory element groups 2, 3 equipped with a magnetic tunnel junction element, and a power source 4 for supplying a write-in current corresponding to the coercive force of the magnetic tunnel junction element in each of the memory element groups 2, 3. The magnetic tunnel junction element of at least one memory element group of the memory element groups 2, 3 is different from the magnetic tunnel junction element of the other memory element group in their coercive force. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
