发明名称 |
DRIVE CIRCUIT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a drive circuit wherein a power MOS transistor can be switched on / off at high speed among a plurality of different potential levels. <P>SOLUTION: The drive circuit is provided with: a constant voltage circuit 31 whose voltage depends on a voltage at a second power terminal VCC2; a Pch MOS transistor 7 whose gate is connected to the constant voltage circuit 31; and a buffer circuit 11 activated by a voltage between the source of the Pch MOS transistor 7 and the second power terminal VCC2 to drive the power MOS transistor 8, and quickly charges / discharges the parasitic capacitance of the power MOS transistor 8 to attain high-speed on / off-operations. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005101747(A) |
申请公布日期 |
2005.04.14 |
申请号 |
JP20030330189 |
申请日期 |
2003.09.22 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
WADA SATOSHI;NAGAOKA KAZUHIKO;KAWAHARA TSUKASA |
分类号 |
H01L27/04;H01L21/822;H03F3/21;H03K17/04;H03K17/08;H03K17/687;H03K19/003;H03K19/0185 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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