SCHOTTKY BARRIER DIODE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a Schottky barrier diode element which ensures higher dielectric strength, good operation characteristics and higher reliability and enables easier integration. SOLUTION: In the Schottky barrier diode element, a p--type SiC layer 2, a plurality of n+-type SiC layers 3 formed with the predetermined interval, a plurality of n--type SiC layers 4, and a plurality of metal layers 5 to form the Schottky junction to the n--type SiC layers 4 are laminated in this sequence on a p+-type SiC substrate 1 in order to form the n--type SiC layer 4 and a plurality of Schottky barrier diode structures 6 formed of the metal layer 5. Moreover, among the adjacent Schottky barrier diode structures 6, a part of the upper surface 3a of the n+-type SiC layer 3 and the upper surface of the metal layer 5 are connected. Consequently, a plurality of connection electrodes 8 are formed to form the ohmic joint to the n+-type SiC layer 3. COPYRIGHT: (C)2005,JPO&NCIPI