| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device pefarable for a circuit for driving a motor and, further in detail, for preventing or suppressing an operation of a parasitic transistor. SOLUTION: A P<SP>+</SP>-type isolation region 4b between a frist transistor Q1 of a driving stage and a second transistor Q2 of an output stage is connected to an output terminal T1 through an auxiliary transistor Qa. The first and the second transistor Q1, Q2 are NPN transistors, and the auxiliary transistor Qx is also an NPN transistor. A base of the auxiliary transistor Qa and the isolation region 4b adjacent to the first transistor Q1 at a part away from the second transistor Q2 are connected to the ground. When the output terminal T1 is at a negative potential, the auxiliary transistor Qa is turned on and the region 4b including a second position P2 is also at a negative potential to prevent the formation of the parasitic transistor Qx. COPYRIGHT: (C)2005,JPO&NCIPI
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