| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing high performance TFT through formation of at least one TFT channel region with a single crystal by enlarging crystal grain size and controlling location for crystal growth. SOLUTION: The method for manufacturing semiconductor thin film utilizing the laser beam comprises a precursor semiconductor thin film forming process to form a precursor semiconductor thin film on a substrate, a patterning processor for discriminating a region where a temperature keeping layer is formed and a region where the temperature keeping layer is not formed by forming a pattern of the temperature keeping layer on the precursor semiconductor thin film, a laser beam irradiating process to fuse the precursor semiconductor thin film for the total thickness by selectively irradiating the region including at least a part of the temperature keeping layer with a first laser beam, and a crystallizing process for crystallizing the semiconductor in the laser beam irradiation region. COPYRIGHT: (C)2005,JPO&NCIPI
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