METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which improves the characteristics and reliability of the device. SOLUTION: The method of manufacturing the semiconductor device comprises processes of: forming a foundation region including an interlayer insulation film 108 on a semiconductor substrate 100; forming an alumina film 117 on the foundation region; forming a hole in the alumina film, filling up the hole with bottom electrode films 118 and 119, forming a dielectric film 121 on the bottom electrode films; and forming a top electrode film 122 on the dielectric film. COPYRIGHT: (C)2005,JPO&NCIPI