发明名称 |
Multi-level gate SONOS flash memory device with high voltage oxide and method for the fabrication thereof |
摘要 |
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a gate dielectric layer over the semiconductor substrate. The gate dielectric layer is formed in a plurality of thicknesses in a plurality of devices regions over the semiconductor substrate. A second dielectric layer is formed over at least one of the devices regions. A third dielectric layer is formed over at least a portion of the second dielectric layer. Ion traps are then selectively implanted in portions of the second dielectric layer.
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申请公布号 |
US2005079674(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20030683052 |
申请日期 |
2003.10.09 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
ZHENG ZIA ZHEN;RAMACHANDRAMURTHY YELEHANKA PRADEEP;LI WEINING |
分类号 |
H01L21/336;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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