发明名称 VERTICAL SEMICONDUCTOR DEVICE
摘要 A vertical semiconductor device having a super-junction structure where N-type column regions and P-type column regions are alternated. A column region termination section is disposed in a position spaced by a distance such that the distance between the termination of an active region and the termination portion of a column region is shorter than the distance equal to the depth of the column region from the active region termination portion by the length which is a half of the width of the N-type column regions. Thus, the electric field concentration on a specific portion in the region facing the short side of the column structure is prevented, and the breakdown voltage of the vertical semiconductor device is improved.
申请公布号 WO2005020275(A3) 申请公布日期 2005.04.14
申请号 WO2004JP11969 申请日期 2004.08.20
申请人 DENSO CORPORATION;YAMAUCHI, SHOICHI;YAMAGUCHI, HITOSHI;SUZUKI, TAKASHI;NAKASHIMA, KYOKO 发明人 YAMAUCHI, SHOICHI;YAMAGUCHI, HITOSHI;SUZUKI, TAKASHI;NAKASHIMA, KYOKO
分类号 H01L;H01L29/06;H01L29/78;(IPC1-7):H01L29/78 主分类号 H01L
代理机构 代理人
主权项
地址