发明名称 SEMICONDUCTOR DEVICE HAVING FUSE AND CAPACITOR POSITIONED AT SAME LEVEL AND MANUFACTURING METHOD OF SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a fuse and a capacitor while minimizing photographic and etching processes provided with the fuse and a MIM capacitor and a manufacturing method of the same. <P>SOLUTION: The semiconductor device includes a semiconductor substrate having a fuse area and a capacitor area. The fuse is disposed on the fuse area, and a lower plate positioned on the same plane as in the fuse is disposed on the capacitor area. An upper plate is positioned on the upper section of the lower plate, and a capping layer is interposed between the lower plate and the upper plate. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005101618(A) 申请公布日期 2005.04.14
申请号 JP20040278476 申请日期 2004.09.24
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK SEUNG-HAN;LEE KI-YOUNG
分类号 H01L23/52;H01L21/02;H01L21/3205;H01L21/82;H01L21/822;H01L21/8242;H01L23/522;H01L23/525;H01L27/04;H01L27/08;H01L27/10;H01L27/108 主分类号 H01L23/52
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