| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having BGA with high reliability. <P>SOLUTION: A glass substrate 56 is adhered to the surface of a silicon wafer 51 formed with a pad electrode 53. A recess b is formed on a backside of the silicon wafer 51 on the pad electrode 53, and a via hole VH penetrating the silicon wafer 51 on the pad electrode 53 from the bottom is formed. After an insulating film 58 and a seed layer 59 are formed on the entire backside of the silicon wafer 51 containing the via hole VH, the pad electrode 53 is exposed in the via hole VH. A wiring layer 60 is formed which is electrically connected to the pad electrode 53 and extends from the via hole VH to the backside of the silicon wafer 51. A solder ball 62 is formed on the wiring layer 60. A semiconductor substrate 51 is divided into a plurality of silicon chips 51A. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
