GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, PRODUCTION METHOD OF THE SAME, GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a production method of a group III nitride semiconductor crystal capable of forming a high quality group III nitride semiconductor crystal in a process where a temperature fluctuation is relatively small.

SOLUTION: A group III material is supplied to a heated sapphire (Al2O3) substrate 9 at a V/III ratio (the ratio of the molecular number of the molecules including a group III element flowing into a reactor and that of the molecules including a group V element) of 500 or less (including the case that the V/III ratio is 0) to form a group III nitride semiconductor 8 including at least Al, then, vapor phase epitaxy (VPE) is performed on a group III nitride semiconductor crystal 7 on the substrate at a substrate temperature of 950 to 1,200°C and the substrate temperature in the first process or less by using the group III material and a nitrogen material.

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