| 摘要 |
The coaxial line(1) comprises a coaxial inner conductor (2) and a first dielectric layer (3) encompassing the coaxial inner conductor (1) and which is surrounded by a coaxial outer conductor (4). The coplanar line (5) comprises a second dielectric layer (9) with a coplanar inner conductor (6) and a first and second coplanar outer conductor (7,8) applied to the front side thereof and with a metallization layer (10) followed by a substrate carrier layer (11) on the rear side thereof. The first and second coplanar outer conductors (7,8) are separated from the coplanar inner conductor (6) by the second dielectric layer (9) and the coaxial inner conductor (2) is connected to the coplanar inner conductor (6) and the coaxial outer conductor (4) is connected to the first and second coplanar outer conductors (7,8). When high bit rate data signals are transmitted via the connecting point of the coaxial line (1) and the coplanar line (5), the capacitative power is increased and indesirable reflections occur. In order to avoid this, a recess is provided in the metallization layer (10), beginning at the point of connection between the coaxial line (1) and the coplanar line (5) and extending in an approximately symmetrical manner with respect to the coplanar inner conductor (6), tapering in the direction of the coplanar inner conductor (6) as the distance from the point of connection increases. |
