| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the properties of an ozone TEOS film formed on a capacitive element. <P>SOLUTION: A capacitive element which consists of a capacitive lower electrode 104, a capacitive insulating film 105, and a capacitive upper electrode 106 is formed on an insulating film 103 which is formed on a semiconductor substrate 100, and then a first protective film 107 which consists of a silicon oxide film and covers the capacitive element is deposited. After a first wiring layer 110 is formed on the insulating film 103 and on the first protective film 107, a base oxide film 111 is deposited on the first wiring layer 110 and on the first protective film 107. Next, a first ozone TEOS film 112 is grown on the base oxide film 111 by a first ozone TEOS method with relatively low ozone concentration, and then a second ozone TEOS film 113 is grown on the first ozone TEOS film 112 by a second ozone TEOS method with relatively high ozone concentration. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
