发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which first and second conductive films are surely connected electrically to each other through a contact hole formed in an insulating film, and the manufacturing cost of a semiconductor device is reduced by far improving the utilizing efficiency of a liquid material required for the formation of the second conductive film. SOLUTION: The method of manufacturing the semiconductor device includes: an insulating film forming step ST0 of forming the insulating film on the first conductive film and, at the same time, the contact hole through the insulating film; a mask material forming step ST1 of forming a mask material which is opened in an area on the insulating film including the contact hole; a liquid material arranging step ST2 of selectively arranging the liquid material in an area on the insulating film including the contact hole through the opening of the mask material; a drying step ST3 of forming the second conductive film partially embedded in the contact hole by drying and solidifying the liquid material; and a mask material removing step ST4. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005101558(A) |
申请公布日期 |
2005.04.14 |
申请号 |
JP20040237563 |
申请日期 |
2004.08.17 |
申请人 |
SEIKO EPSON CORP |
发明人 |
SATO MITSURU;YUDASAKA KAZUO |
分类号 |
G02F1/1368;G03F7/40;H01L21/02;H01L21/027;H01L21/336;H01L21/768;H01L29/786;H01L51/50;H05B33/14;(IPC1-7):H01L21/768;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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