| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for preventing a metal in a lower wiring layer from being corroded because a trench pattern and a hole pattern reach the lower wiring layer when the hole pattern and the trench pattern for seal ring are formed. SOLUTION: The manufacturing method of a semiconductor device first forms a first metallic wire 102 in a wire forming region R1 and a second metallic wire 103 in a seal ring region R2. Then a recessed part 110 is formed by recessing an upper part of the first and second metallic wires 102, 103 by chemical mechanical polishing or etching. Thereafter a second insulation film 104 to bury the recessed part 110 is formed on a substrate to make the upper face flat. Then the hole pattern 106 and the trench pattern 107 are formed to a midway depth of the second insulation film 104 and ashing and polymer elimination are carried out. Thereafter the hole pattern 106 and the trench pattern 107 are reached to the first and second metallic wires 102, 103. COPYRIGHT: (C)2005,JPO&NCIPI |
