| 摘要 |
Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing beta-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I-I), in which R<a >is alkylene, and each of R<b>, R<c >and R<d >is alkyl; and Y is an alkyl group or a group represented by the formula (I-I), in which R<a >is alkylene, and each of R<b>, R<c >and R<d >is alkyl.
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