发明名称 Formation of multisegmented plated through holes
摘要 A method and structure relating to multisegmented plated through holes. A substrate includes a dielectric layer sandwiched between a first laminate layer and a second laminate layer. A through hole is formed through the substrate. The through hole passes through nonplatable dielectric material within the dielectric layer. As a result, subsequent seeding and electroplating of the through hole results in a conductive metal plating forming at a wall of the through hole on a segment of the first laminate layer and on a segment of the second laminate layer, but not on the nonplatable dielectric material of the dielectric layer. Thus, the conductive metal plating is not continuous from the first laminate layer to the second laminate layer.
申请公布号 US2005079289(A1) 申请公布日期 2005.04.14
申请号 US20030641182 申请日期 2003.08.14
申请人 FARQUHAR DONALD S.;JAPP ROBERT M.;LAUFFER JOHN M.;PAPATHOMAS KONSTANTINOS I. 发明人 FARQUHAR DONALD S.;JAPP ROBERT M.;LAUFFER JOHN M.;PAPATHOMAS KONSTANTINOS I.
分类号 H05K3/42;(IPC1-7):B05D7/00;B05D1/36 主分类号 H05K3/42
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