NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a nitride semiconductor device comprising a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer has a first p-type nitride semiconductor layer containing Al and Mg, and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is arranged between the active layer and the second p-type nitride semiconductor layer. The second p-type nitride semiconductor layer has a band gap larger than that of the first p-type nitride semiconductor layer.