| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can improve throughput by shortening a manufacturing process including an electric characteristic test. <P>SOLUTION: The method of manufacturing a semiconductor device comprises an element formation process, a test process, and a connection process. In the element formation process, a transistor 12 having first and second electrodes 12d and 12s and a gate electrode 12g, a first terminal 24 connected to the first electrode 12d, second and third terminals 16 and 23 connected to the second electrode 12s, inductor 11 whose one end is connected to the first electrode 12d on a first substrate 21, and a fourth terminal 15 connected to the other end of the inductor 11, are formed on the first substrate 21. In the test process, DC is measured using the terminals connected to the first and second electrodes 12d and 12s respectively to test the transistor 12 for electric characteristics. In the connection process, the second and fourth terminals 16 and 15 are electrically connected via a connection member after the test process. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
